Мікросхема AF4825P 30V 11A p-ch SO-8

AF4825P

axi

mum Ratings

(T

A

=25ºC unless otherwise noted)

Symbol

Parameter

Rating

Units

V

DS

Drain-Source Voltage

-30

V

V

GS

Gate-Source Voltage

±25

V

T

A

=25ºC -11.5

I

D

Continuous Drain Current

(Note 1)

T

A

=70ºC -9.3

A

I

DM

Pulsed Drain Current

(Note 2)

±50 A

I

S

Continuous Source Current (Diode Conduction)

(Note 1)

-2.1 A

T

A

=25ºC 3.1

P

D

Power Dissipation

(Note 1)

T

A

=70ºC 2.3

W

T

J

, T

STG

Operating Junction and Storage Temperature Range

-55 to 150

ºC

„

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

R

θ

JC

Maximum Junction-to-Case

(Note 1)

t

<

5 sec

25

ºC/W

R

θ

JA

Maximum Junction-to-Ambient

(Note 1)

t

<

5 sec

50

ºC/W

Note 1:

surface Mounted on 1”x 1” FR4 Board.

Note 2:

Pulse width limited by maximum junction temperature

„

Specifications

(T

A

=25ºC unless otherwise noted)

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static

V

(BR)DSS

Drain-Source breakdown Voltage

V

GS

=0V, I

D

=-250uA -30 - - V

V

GS(th)

Gate-Threshold Voltage

V

DS

= V

GS

, I

D

=-250uA -1 -1.6 -3 V

I

GSS

Gate-Body Leakage

V

DS

=0V, V

GS

=±25V - - ±100

nA

V

DS

=-24V, V

GS

=0V - - -1

I

DSS

Zero Gate Voltage Drain Current

V

DS

=-24V, V

GS

=0V,

T

J

=55ºC

- - -5

uA

I

D(on)

On-State Drain Current

(Note 3)

V

DS

=-5V, V

GS

=-10V -50 - - A

V

GS

=-10V, I

D

=-11.5A - 10 13

V

GS

=-4.5V, I

D

=-9.3A - 15 19.0

r

DS(on)

Drain-Source On-Resistance

(Note 3)

V

GS

=-10V, I

D

=-13A,

T

J

=55ºC

- 11 13

m

Ω

g

fs

Forward Tranconductance

(Note 3)

V

GS

=-15V, I

D

=-11.5A - 29 - S

V

SD

Diode Forward Voltage

I

S

=2.5A, V

GS

=0V - -0.8 -1.2 V

Dynamic

(Note 4)

Q

g

Total Gate Charge

-

64

100

Q

gs

Gate-Source Charge

- 11 -

Q

gd

Gate-Drain Charge

V

DS

=-15V, V

GS

=-10V,

I

D

=-11.5A

- 17 -

nC

Switching

t

d(on)

Turn-On Delay Time

-

15

25

t

r

Rise Time

- 13 20

t

d(off)

Turn-Off Delay Time

-

100

152

t

f

Fall-Time

V

DD

=-15, R

L

=6

Ω

,

ID=-1A, VGEN=-10V

- 54 81

nS

Note 3:

Pulse test: PW

<

300us duty cycle

<

2%.

Note 4:

Guaranteed by design, not subject to production testing.