Транзистор BFP620 sot-343

BFP620 NPN Silicon-Germanium RF Transistor Preliminary Data � For high gain low noise amplifier � Noise Figure F = 0.65 dB at 1.8 GHz � Gms=21dB at 1.8 GHz � Gold metalization for high reliability � 70GHz fT - Line � 10dBm Input IP3 capability @ 1.95 GHz, VCE=2V, ICE=6mA ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Package Pin Configuration (8-mm taped) 1 2 3 4 B E C ESOT-343 BFP620 Maximum Ratings Parameter Symbol Unit Collector-emitter voltage VCEO 2.5 V Collector-base voltage V tbd V CBO Emitter-base voltage V 1.5 V EBO Collector current I 80 mA C Base current I tbd mA B 1)2) Total power dissipation, Ts ? tbd. P tbd mW tot Junction temperature T tbd �C j Ambient temperature range T -65...+150�C �

Type Designator: BFP620
   SMD Transistor Code: R2s
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92