Type Designator: YGF20N65T2 📄📄
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 30.6 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qg ⓘ - Total Gate Charge, typ: 45 nC
Package: TO220F
Інформація для замовлення
- Ціна: 68 ₴

