Type Designator: IGW40N65H5
Type: IGBT
Marking Code: G40EH5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 255 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 74 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 40 pF
Qgⓘ - Total Gate Charge, typ: 95 nC
Package: TO247
Type: IGBT
Marking Code: G40EH5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 255 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 74 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 40 pF
Qgⓘ - Total Gate Charge, typ: 95 nC
Package: TO247
Інформація для замовлення
- Ціна: 105 ₴