TPN2R703NLStart of commercial production2013-081. 1. 1. 1. ApplicationsApplicationsApplicationsApplications• High-Efficiency DC-DC Converters• Switching Voltage Regulators2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures(1)High-speed switching(2)Small gate charge: QSW = 5.2 nC (typ.)(3)Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 4.5 V)(4)Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)(5)Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitTSON Advance1, 2, 3: Source4: Gate5, 6, 7, 8: Drain4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (Taaaa = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified)CharacteristicsDrain-source voltageGate-source voltageDrain current (DC)Drain current (DC)Drain current (pulsed)Power dissipationPower dissipationPower dissipationSingle-pulse avalanche energyAvalanche currentChannel temperatureStorage temperature(Silicon limit)(Tc = 25 )(t = 1 ms)(Tc = 25 )(t = 10 s)(t = 10 s)(Note 1), (Note 2)(Note 1)(Note 1)(Note 3)(Note 4)(Note 5)SymbolVDSSVGSSIDIDIDPPDPDPDEASIARTchTstgRating30±209045200421.90.712145150-55 to 150UnitVAWmJANote:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly evenif the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximumratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).2014-02-27Rev.2.0
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