Type Designator: FGH75T65SHD
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 455
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 150
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 56
Collector Capacity (Cc), typ, pF: 179
Total Gate Charge (Qg), typ, nC: 123
Package: TO247
Характеристики
| Основні | |
|---|---|
| Виробник | SAT |
Інформація для замовлення
- Ціна: 149 ₴
