IGCM04G60HA
Features
Fully isolated Dual In-Line molded module
Reverse conducting IGBTs with monolithic body diode
Rugged SOI gate driver technology with stability against transient and negative voltage
Allowable negative VS potential up to -11V for signal transmission at VBS=15V
Integrated bootstrap functionality
Over current shutdown
Under-voltage lockout at all channels
Low side common emitter
Cross-conduction prevention
All of 6 switches turn off during protection
Lead-free terminal plating; RoHS compliant
Інформація для замовлення
- Ціна: 448 ₴