FDB6035AL
Type Designator: FDB6035AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 58 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 48 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0125 Ohm
Package: TO263
Інформація для замовлення
- Ціна: 43 ₴