H5N2007
Drain to Source voltage VDSS 200 V
Gate to Source voltage VGSS ±30 V
Drain current ID 25 A
Drain peak current ID (pulse)Note1 100 A
Body-Drain diode reverse Drain current IDR 25 A
Body-Drain diode reverse Drain peak current IDR (pulse)Note1 100 A
Avalanche current IAPNote3 9 A
Avalanche energy EARNote3 5.4 mJ
Channel dissipation Pch Note2 30 W
Channel to case thermal impedance θch-c 4.17 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
- Ціна: 113 ₴