Транзистор IHW30N120R2 H30R1202
79 ₴
- В наявності
- Код: ДК-39
- +380 (50) 266-55-17Приемка
- +380 (44) 503-61-12Приемка
Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Package IHW30N120R2 1200V 30A 1.65 V 175°C H30R1202 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V C E 1200 V DC collector current TC = 25°C TC = 100°C I C 60 30 Pulsed collector current, tp limited by Tjmax I Cpuls 90 Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) - 90 Diode forward current TC = 25°C TC = 100°C I F 60 30 Diode pulsed current, tp limited by Tjmax I Fpuls 90 Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5 μs, sine halfwave TC = 100°C, tp ≤ 2.5 μs, sine halfwave I FSM 50 130 120 A Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) V G E ±20 ±25 V Power dissipation TC = 25°C Ptot 390 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6 mm (0.063 in.) from case for 10s - 260 °C
- Ціна: 79 ₴
