Транзистор HYG011N04LS1TA G011N04
Type Designator: HYG011N04LS1C2 📄📄
Marking Code: G011N04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 165 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3 V
Qg ⓘ - Total Gate Charge: 89 nC
tr ⓘ - Rise Time: 98 nS
Cossⓘ - Output Capacitance: 1278 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: PDFN5X6-8L
Характеристики
| Основные | |
|---|---|
| Производитель | PD |
Информация для заказа
- Цена: 86 ₴

