Транзистор CRJF190N65GCF TO-220F
FCP190N65F Specs and Replacement
Type Designator: FCP190N65F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V
Qg ⓘ - Total Gate Charge: 60 nC
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO220
- MOSFET ⓘ Cross-Reference Search
Інформація для замовлення
- Ціна: 70 ₴

