The MDP14N050 (often MDP14N050TH) is a high-performance N-channel Trench MOSFET from
, featuring a 135V Drain-Source Voltage (
VDScap V sub cap D cap S end-sub
𝑉𝐷𝑆
) and 120A Drain Current (IDcap I sub cap D
𝐼𝐷
) with an extremely low 5.0mΩ on-resistance (RDS(ON)cap R sub cap D cap S open paren cap O cap N close paren end-sub
𝑅𝐷𝑆(𝑂𝑁)
) at 10V gate voltage, packaged in a TO-220/TO-247 through-hole type. This power MOSFET is ideal for industrial uses like e-bike drives, DC-DC converters, and general switching applications needing fast, efficient power handling.Key Specifications:
- Type: Single N-channel Trench MOSFET
- Voltage (
VDScap V sub cap D cap S end-sub
𝑉𝐷𝑆): 135V - Current (
IDcap I sub cap D
𝐼𝐷): 120A @VGS=10Vcap V sub cap G cap S end-sub equals 10 cap V
𝑉𝐺𝑆=10𝑉 - On-Resistance (
RDS(ON)cap R sub cap D cap S open paren cap O cap N close paren end-sub
𝑅𝐷𝑆(𝑂𝑁)): < 5.0 mΩ @VGS=10Vcap V sub cap G cap S end-sub equals 10 cap V
𝑉𝐺𝑆=10𝑉 - Package: TO-220 / TO-247 (through-hole)
- Operating Temp: Up to 175°C
Applications:
- E-bike / Light Electric Vehicle drives
- DC-DC Converters
- General Purpose Switching
Інформація для замовлення
- Ціна: 68 ₴

