Транзистор HYG025N06LS1 60V 160A TO-220
48 ₴
Минимальная сумма заказа на сайте — 250 ₴
- В наличии
- Код: ДК-237
Транзистор HYG025N06LS1 60V 160A TO-220В наличии
48 ₴
+380 (67) 298-34-55
VIBER- +380 (50) 266-55-17Приемка
Законом не предусмотрен возврат и обмен данного товара надлежащего качества
Type Designator: HYG025N06LS1P
Marking Code: G025N06_GO25N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 58.3 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 1310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO220
Marking Code: G025N06_GO25N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 160 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 58.3 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 1310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO220
Характеристики
| Основные | |
|---|---|
| Производитель | PD |
Информация для заказа
- Цена: 48 ₴