Транзистор HY14P10D 100V 10A p-ch TO-252
48 ₴
Минимальная сумма заказа на сайте — 250 ₴
- В наличии
- Код: СК-21(1)
Транзистор HY14P10D 100V 10A p-ch TO-252В наличии
48 ₴
+380 (67) 298-34-55
VIBER- +380 (50) 266-55-17Приемка
Законом не предусмотрен возврат и обмен данного товара надлежащего качества
Type Designator: HY10P10D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: TO252
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 31.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 340 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: TO252
Характеристики
| Основные | |
|---|---|
| Производитель | PD |
Информация для заказа
- Цена: 48 ₴