Type Designator: IRFS7430PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 375 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 195 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 300 nC
Rise Time (tr): 105 nS
Drain-Source Capacitance (Cd): 2130 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0012 Ohm
Package: TO-263
Характеристики
| Основні | |
|---|---|
| Виробник | PD |
Інформація для замовлення
- Ціна: 67 ₴

