Транзистор RJP6085 600V 40A IGBT
38 ₴
Минимальная сумма заказа на сайте — 250 ₴
- Нет в наличии
- Код: ДК-229
- +380 (50) 266-55-17Приемка
RJP6085
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to Emitter voltage V CES 600 V
Gate to Emitter voltage
V
GES
±30 V
Collector current
I
C
40 A
Collector peak current
I
C(peak)
Note1 80A
Collector dissipation
P
C
Note2
178.5 W
Junction to case thermal impedance
θ
j-c
Note2
0.7 °C/W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25
°
C
RJP6085DPK
REJ03G1862-0100 Rev.1.00 Nov 09, 2009
Page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current
I
CES
— — 10
μ
A V
CE
= 600V, V
GE
= 0 V
Gate to emitter leak current
I
GES
— — ±1
μ
A V
GE
= ±30 V, V
CE
= 0 V
Gate to emitter cutoff voltage
V
GE(off)
4 — 6 V V
CE
= 10V, I
C
= 1 mA
Collector to emitter
saturation voltage
V
CE(sat)
— 2.65 3.5 V I
C
= 40 A, V
GE
= 15V
Note3
Input capacitance
Cies
—
1150
—
pF
Output capacitance
Coes — 105 — pF
Reveres transfer capacitance
Cres
—
12
—
pF
V
CE
= 25V
V
GE
= 0 V
f = 1MHz
t
d(on)
— 30 — ns
t
r
— 60 — ns
t
d(off)
— 60 — ns
Switching time
t
f
— 40 — ns
I
C
= 40 A, Resistive Load
V
CC
= 300V
V
GE
= 15V
Rg =
- Цена: 38 ₴