TK7P60W
Power MOSFET (N-ch 500V
Description
| Application Scope |
Switching Voltage Regulators |
| Polarity |
N-ch |
| Generation |
DTMOSⅣ |
| Internal Connection |
Single |
| RoHS Compatible Product(s) (#) |
Available |
| Assembly bases |
China |
Package Information
| Toshiba Package Name |
DPAK |
| Package Image |
 |
| Pins |
3 |
| Mounting |
mount-smd |
Width×Length×Height
(mm) |
6.6×10.0×2.3 |
| Package Dimensions |
View |
| Land pattern dimensions |
View |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics |
Symbol |
Rating |
Unit |
| Drain-Source voltage |
VDSS |
600 |
V |
| Gate-Source voltage |
VGSS |
+/-30 |
V |
| Drain current |
ID |
7.0 |
A |
| Power Dissipation |
PD |
60 |
W |
Electrical Characteristics
| Characteristics |
Symbol |
Condition |
Value |
Unit |
| Gate threshold voltage (Max) |
Vth |
- |
3.7 |
V |
| Drain-Source on-resistance (Max) |
RDS(ON) |
|VGS|=10V |
600 |
mΩ |
| Input capacitance (Typ.) |
Ciss |
- |
490 |
pF |
| Total gate charge (Typ.) |
Qg |
VGS=10V |
15 |
nC |
Document
| Data sheet |
 TK7P60W Data sheet/Japanese [Sep,2014] (PDF: 364KB) |
| Data sheet |
TK7P60W Data sheet/English [Sep,2014] (PDF: 243KB) |
| PSpice |
 PSpice Model [Aug,2013] (lib: 3KB) |
| PSpice |
PSpice G1 model:This simulation model can express unique electrical characteristics of the high-voltage MOSFET. [Sep,2017] (lib: 28KB) |
| Reliability Information |
Reliability Data [Mar,2017] (PDF: 160KB) |
| Application Note |
Structures and Characteristics: Power MOSFET Application Notes [Jul,2018] (PDF: 331KB) |
| Application Note |
Maximum Ratings: Power MOSFET Application Notes [Jul,2018] (PDF: 705KB) |
| Application Note |
Electrical Characteristics: Power MOSFET Application Notes [Jul,2018] (PDF: 603KB) |
| Application Note |
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes [Jul,2018] (PDF: 848KB) |
| Application Note |
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes [Jul,2018] (PDF: 789KB) |
| Application Note |
Parasitic Oscillation and Ringing: Power MOSFET Application Notes [Jul,2018] (PDF: 1394KB) |
| Application Note |
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes [Jul,2018] (PDF: 1178KB) |
| Application Note |
MOSFET Gate Drive Circuit: Power MOSFET Application Notes [Jul,2018] (PDF: 1215KB) |
| Application Note |
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018] (PDF: 846KB) |
| Application Note |
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes [Jul,2018] (PDF: 616KB) |
| Application Note |
Hints and Tips for Thermal Design for Discrete Semiconductor Devices [Jul,2018] (PDF: 1266KB) |
| Application Note |
Calculating the Temperature of Discrete Semiconductor Devices [Jul,2018] (PDF: 965KB) |
| Application Note |
Derating of the MOSFET Safe Operating Area [Jul,2018] (PDF: 656KB) |
| Application Note |
MOSFET Self-Turn-On Phenomenon [Jul,2018] (PDF: 1338KB) |
| Application Note |
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018] (PDF: 1069KB) |
| Catalog |
MOSFETs [Mar,2016] (PDF: 2526KB) |
| Catalog |
Part Number List: MOSFETs [Mar,2016] (PDF: 1295KB) |
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